 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application * * * * * Enhancement mode type High speed : tf = 0.15 s (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC Pulsed @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 950 25 60 120 25 50 76 190 150 -55 to 150 Unit V V A JEDEC A 2-21F2C Diode forward current Collector power dissipation Junction temperature JEITA TOSHIBA W C C Weight: 9.75 g (typ.) Storage temperature range Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.66 1.38 Unit C/W C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA Gate Emitter GT60M322 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 GT60M322 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 25 A, VGE = 0 IF = 25 A, di/dt = -200 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 950 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 60 A VGG = 15 V, RG = 30 (Note 1) Min 6.0 Typ. 2.3 6800 0.42 0.62 0.15 0.39 Max 500 1.0 9.0 2.7 0.21 3.0 0.35 V s s Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton 2 2004-07-06 GT60M322 IC - VCE 120 10 VCE - VGE VCE (V) Common emitter Tc = 25C Common emitter Tc = -40C 80 6 100 (A) 8 20 80 15 10 Collector current IC 60 Collector-emitter voltage 4 30 2 40 VGE = 9 V 20 60 IC = 10 A 0 0 0 0 1 2 3 4 5 5 10 15 20 25 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE - VGE 10 VCE - VGE VCE (V) Common emitter Tc = 25C 10 Common emitter Tc = 125C 80 6 VCE (V) 8 80 6 8 Collector-emitter voltage 4 60 2 30 0 0 IC = 10 A Collector-emitter voltage 4 60 2 30 0 0 IC = 10 A 10 15 20 25 5 10 15 20 25 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 100 Common emitter VCE = 5 V 4 Common emitter VGE = 15 V 3 VCE (sat) - Tc (A) 80 Collector-emitter saturation voltage VCE (sat) (V) IC 80 60 Collector current 2 60 30 IC = 10 A 40 25 20 -40 TC = 125C 0 0 4 8 12 16 1 0 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (C) 3 2004-07-06 GT60M322 VCE, VGE - QG 200 Common 20 emitter RL = 2.5 Tc = 25C VCE = 150 V 100000 C - VCE Common emitter VGE = 0 VCE (V) 160 16 (V) Collector-emitter voltage Gate-emitter voltage Capacitance C 120 12 VGE (pF) 10000 Cies f = 1 MHz Tc = 25C 1000 80 100 V 40 50 V 8 100 Coes Cres 4 0 0 50 100 150 200 250 300 350 0 400 450 500 10 1 10 100 1000 10000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching Time - RG 10 Common emitter VCC = 600 V IC = 60 A VGG = 15 V Tc = 25C 1 Switching Time - IC (s) (s) toff ton tr 0.1 tf Switching time 1 Switching time toff ton tf tr 10 100 1000 RG = 30 VGG = 15 V Tc = 25C 0.01 0 10 20 30 40 50 60 Common emitter VCC = 600 V 0.1 1 70 Gate resistance RG () Collector current IC (A) Safe Operating Area 1000 1000 Reverse Bias SOA Tj < 125C = VGG = 20 V RG = 10 (A) 100 IC max (continuous) 10 DC operation 1 ms* 10 ms * 100 s* 10 s* (A) Collector current IC IC max (pulsed)* 100 Collector current IC 10 * Single non-repetitive pulse Tc = 25C 1 Curves must be derated linearly with increase in temperature. 0.1 1 10 1 100 1000 3000 0.1 1 10 100 1000 3000 Collector- emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2004-07-06 GT60M322 Rth (t) - tw (C/W) 102 Tc = 25C 40 50 IF - VF -40 25 Common collector Rth (t) 101 Transient thermal impedance Diode stage 10 0 30 IGBT stage 10-1 20 10 Tc = 125C 10-2 10-4 10-3 10-2 10-1 100 101 102 0 0 1 2 3 4 5 Pulse width tw (s) Forward voltage VF (V) trr, Irr - IF 1 100 (s) trr Reverse recovery time trr 0.1 Irr 10 Common Collector di/dt = -200 A/s : Tc = 25C : Tc = 125C 0.01 0 5 10 15 20 25 1 30 Forward current IF (A) Peak reverse recovery current Irr (A) 5 2004-07-06 GT60M322 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06 |
Price & Availability of GT60M322
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |